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PD - 90675C
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
Product Summary
Part Number Radiation Level IRHM7150 100K Rads (Si) IRHM3150 300K Rads (Si) IRHM4150 IRHM8150 600K Rads (Si) 1000K Rads (Si) RDS(on) RDS(on) 0.065 0.065 0.065 0.065
REF: MIL-PRF-19500/603 (R) RAD Hard HEXFET TECHNOLOGY
IRHM7150 JANSR2N7268 100V, N-CHANNEL
ID 34A 34A 34A 34A
QPL Part Number JANSR2N7268 JANSF2N7268 JANSG2N7268 JANSH2N7268
TO-254AA
International Rectifiers RADHard ogy provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
HEXFET(R) technol-
Features:
! ! ! ! ! ! ! ! !
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 34 21 136 150 1.2 20 500 34 15 5.5 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
300 (0.063 in. (1.6mm) from case for 10s) 9.3 (Typical)
g
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IRHM7150
Pre-Irradiation
@ Tj = 25C (Unless Otherwise Specified) Min
100 2.0 8.0
Electrical Characteristics
Parameter
Typ Max Units
0.13 6.8 V V/C
Test Conditions
VGS =0 V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 21A " VGS = 12V, ID = 34A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 21A " VDS= 80V,VGS=0V VDS = 80V VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS = 12V, ID = 34A VDS = 50V VDD = 50V, ID = 14A, VGS = 12V, RG = 2.35
IGSS IGSS Qg Q gs Qgd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
100 -100 160 35 65 45 190 170 130
nA nC
ns nH
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance

4300 1200 200

pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
34 136 1.4 570 5.8
A
V nS C Tj = 25C, IS = 34A, VGS = 0V Tj = 25C, IF = 34A, di/dt 100A/s VDD 50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthCS RthJA Junction-to-Case Case-to-sink Junction-to-Ambient
Min Typ Max Units
0.83 0.21 48
C/W
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
2
BVDSS Drain-to-Source Breakdown Voltage BV DSS /TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
0.065 0.076 4.0 V S( ) 25 A 250
Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package)
VGS = 0V, VDS = 25V f = 1.0MHz
Test Conditions
Test Conditions
Typical socket mount
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Radiation Characteristics Pre-Irradiation
IRHM7150
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
Min
100K Rads(Si)
Max 4.0 100 -100 25 0.065 0.065 1.4
Min
300 to 1000K Rads (Si)
Max
Units V nA A V
Test Conditions
BVDSS V/5JD IGSS IGSS IDSS RDS(on) RDS(on) VSD
Drain-to-Source Breakdown Voltage Gate Threshold Voltage# Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source# On-State Resistance (TO-3) Static Drain-to-Source# On-State Resistance (TO-254AA) Diode Forward Voltage#
100 2.0
100 1.25
4.5 100 -100 50 0.09 0.09 1.4
VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=80V, VGS =0V VGS = 12V, ID =21A VGS = 12V, ID =21A VGS = 0V, IS = 34A
1. Part number IRHM7150 (JANSR2N7268) 2. Part numbers IRHM3150 (JANSF2N7268), IRHM4150 (JANSG2N7268) and IRHM8150 (JANSH2N7268)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Cu Br LET Energy Range VDS(V) MeV/(mg/cm )) (MeV) (m) @VGS=0V@VGS=-5V@VGS=-10V @VGS=-15V @VGS=-20V @VGS=-25V 28 285 43 100 100 100 80 60 36.8 305 39 100 90 70 50
120 100 80 VDS 60 40 20 0 0 -5 -10 VGS -15 -20 -25 Cu Br
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHM7150
Post-Irradiation Pre-Irradiation
Fig 1. Typical Response of Gate Threshhold Voltage Vs. Total Dose Exposure
Fig 2. Typical Response of On-State Resistance Vs. Total Dose Exposure
Fig 3. Typical Response of Transconductance Vs. Total Dose Exposure
Fig 4. Typical Response of Drain to Source Breakdown Vs. Total Dose Exposure
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Post-Irradiation Pre-Irradiation
IRHM7150
Fig 5. Typical Zero Gate Voltage Drain Current Vs. Total Dose Exposure
Fig 6. Typical On-State Resistance Vs. Neutron Fluence Level
Fig 8a. Gate Stress of VGSS Equals 12 Volts During Radiation
Fig 7. Typical Transient Response of Rad Hard HEXFET During 1x1012 Rad (Si)/Sec Exposure
Fig 8b. VDSS Stress Equals 80% of BVDSS During Radiation
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IRHM7150
Note: Bias Conditions during radiation: V/5 = 12 Vdc, V,5 = 0 Vdc
Characteristics RadiationPost-Irradiation Pre-Irradiation
Fig 9. Typical Output Characteristics Pre-Irradiation
Fig 10. Typical Output Characteristics Post-Irradiation 100K Rads (Si)
Fig 11. Typical Output Characteristics Post-Irradiation 300K Rads (Si)
Fig 12. Typical Output Characteristics Post-Irradiation 1 Mega Rads(Si)
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Radiation Characteristics Pre-Irradiation
Note: Bias Conditions during radiation: V/5 = 0 Vdc, V,5 = 80 Vdc
IRHM7150
Fig 13. Typical Output Characteristics Pre-Irradiation
Fig 14. Typical Output Characteristics Post-Irradiation 100K Rads (Si)
Fig 15. Typical Output Characteristics Post-Irradiation 300K Rads (Si)
Fig 16. Typical Output Characteristics Post-Irradiation 1 Mega Rads(Si)
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IRHM7150
Pre-Irradiation
Fig 17. Typical Output Characteristics
Fig 18. Typical Output Characteristics
Fig 19. Typical Transfer Characteristics
Fig 20. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHM7150
29
Fig 21. Typical CapacitanceVs. Drain-to-Source Voltage
Fig 22. Typical Gate Charge Vs. Gate-to-Source Voltage
Fig 23. Typical Source-Drain Diode Forward Voltage
Fig 24. Maximum Safe Operating Area
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IRHM7150
Pre-Irradiation
VDS VGS RG
RD
D.U.T.
+
-VDD
VGS
Pulse Width 1 s Duty Factor 0.1 %
Fig 26a. Switching Time Test Circuit
VDS 90%
Fig 25. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 26b. Switching Time Waveforms
Fig 27. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHM7150
15V
VDS
L
DRIVER
RG
20V VGS
D.U.T
IAS tp
+ - VDD
A
0.01
Fig 28a. Unclamped Inductive Test Circuit
V(BR)DSS tp
Fig 28c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 28b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 29a. Basic Gate Charge Waveform
Fig 29b. Gate Charge Test Circuit
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IRHM7150
Pre-Irradiation
Foot Notes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 25V, starting TJ = 25C, L= 0.86mH Peak IL = 26A, VGS = 12V ISD 26A, di/dt 190A/s, VDD 100V, TJ 150C
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with V DS Bias. 80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions TO-254AA
.12 ( .005 ) 3.78 ( .149 ) 3.53 ( .139 ) -A13.84 ( .545 ) 13.59 ( .535 ) 6.60 ( .260 ) 6.32 ( .249 ) -B1.27 ( .050 ) 1.02 ( .040 )
17.40 ( .685 ) 16.89 ( .665 ) 31.40 ( 1.235 ) 30.39 ( 1.199 ) 1 2 3
20.32 ( .800 ) 20.07 ( .790 )
13.84 ( .545 ) 13.59 ( .535 )
LEGEND 1 - COLL 2 - EMIT 3 - GATE
-C-
3.81 ( .150 ) 2X
3X
1.14 ( .045 ) 0.89 ( .035 ) .50 ( .020 ) .25 ( .010 ) M C AM B MC
3.81 ( .150 )
LEGEND 1- DRAIN 2- SOURCE 3- GATE IRHM57163SED IRHM57163SEU
CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. . Data and specifications subject to change without notice. 08/01
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